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   BYR29X-800 All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 12 July 2010 6 of 12 NXP Semiconductors BYR29X-800 Ultrafast power diode Fig 5. Forward current as a function of forward voltage Fig 6. Recovered charge as a function of rate of change of forward current Fig 7. Reverse recovery definitions; ramp recovery Fig 8. Reverse recovery time as a function of rate of change of forward current at indicated temperatures; maximum values VF (V) 10 031 2 11010 2 003aaa472 10 20 30 IF (A) 0 (1) (2) (3) dIF/dt (A/μs) 003aaa473 102 103 Qr (nC) (1) (2) 003aac562 trr time 100 % 25 % IF dlF dt IR IRM Qr dIF/dt (A/μs) 10 11010 2 003aaa470 102 103 trr (ns) Tj = 25 °C Tj = 100 °C (1) (2) |